High mobility and broad spectral responsivity thin film transistors with ultrathin niobium-doped indium oxide channel layer-Demo conference-Chinese Mechanical Engineering Society

ID：200 View protection：Public Updated time：2023-12-14 17:27:34 Views：1534 口头报告

Start Time：2021-06-29 12:25

Duration：20min

Session：[C] Session C [C1] Session block C-1

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abstract1

；中国科学院武汉病毒研究所

Demo conference ( Demo conference)